SI1071X-T1-GE3【PDF 2/8 页】MOSFET P-CH 30V 960MA SC89-6

您好，
买卖IC网欢迎您。
请登录
免费注册

1页 [2页]3页 4页 5页 6页

Si1071X

Vishay Siliconix

SPECIFICATIONS (T J = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V DS Temperature Coefficient

V GS(th) Temperature Coefficient

V DS

? V DS /T J

? V GS(th) /T J

V GS = 0 V, I D = - 250 μA

I D = - 250 μA

- 30

- 32.07

3.02

V

mV/°C

Gate-Source Threshold Voltage

V GS(th)

V DS = V GS , I D = - 250 μA

- 0.7

- 1.45

V

On-State Drain Current

Gate-Source Leakage

Zero Gate Voltage Drain Current

a

I GSS

I DSS

I D(on)

V DS = 0 V, V GS = ± 12 V

V DS = - 30 V, V GS = 0 V

V DS = - 30 V, V GS = 0 V, T J = 85 °C

V DS = ? 5 V, V GS = - 10 V

V GS = - 10 V, I D = - 0.96 A

-8

0.139

± 100

-1

- 10

0.167

nA

nA

μA

A

Drain-Source On-State Resistance a

R DS(on)

V GS = - 4.5 V, I D = - 0.9 A

0.147

0.177

?

V GS = - 2.5 V, I D = - 0.79 A

0.195

0.244

Forward Transconductance

g fs

V DS = - 15 V, I D = - 0.96 A

4.25

S

Dynamic

b

Input Capacitance

C iss

315

Output Capacitance

Reverse Transfer Capacitance

C oss

C rss

V DS = - 15 V, V GS = 0 V, f = 1 MHz

60

45

pF

Total Gate Charge

Gate-Source Charge

Q g

Q gs

V DS = - 15 V, V GS = - 4.5 V, I D = - 0.96 A

V DS = - 15 V, V GS = - 10 V, I D = - 0.96 A

4.43

8.87

0.83

6.64

13.3

nC

Gate-Drain Charge

Q gd

1.57

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off DelayTime

Fall Time

Turn-On Delay Time

Rise Time

Turn-Off DelayTime

Fall Time

R g

t d(on)

t r

t d(off)

t f

t d(on)

t r

t d(off)

t f

f = 1 MHz

V DD = - 15 V, R L = 19.74 ?

I D ? - 0.76 A, V GEN = - 10 V, R g = 1 ?

V DD = - 15 V, R L = 20.27 ?

I D ? - 0.74 A, V GEN = - 4.5 V, R g = 1 ?

9.8

3.8

12

18

7

13

25

36

14

14.7

5.7

18

27

10.5

20

38

54

21

?

ns

Drain-Source Body Diode Characteristics

Pulse Diode Forward Current a

I SM

8

A

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery

Reverse Recovery Fall Time

V SD

t rr

Q rr

t a

I S = - 0.63 A

I F = - 0.7 A, dI/dt = 100 A/μs

0.8

12.7

5.7

8.9

1.2

19.05

8.6

V

nC

ns

Reverse Recovery Rise Time

t b

3.8

Notes:

a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

2

Document Number: 74321

S10-2542-Rev. C, 08-Nov-10

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

SI1072X-T1-GE3 MOSFET N-CH 30V SC89

SI1120-A-GM IC PROXIMITY/AMBIENT SEN 8ODFN

SI1141-A10-GM IC SENSOR IR PROX/AMBIENT 10-QFN

SI1143-A10-GMR SENS IR PROXIMITY AMB LT 10QFN

SI1300BDL-T1-GE3 MOSFET N-CH D-S 20V SC-70-3

SI1302DL-T1-GE3 MOSFET N-CH D-S 30V SC-70-3

SI1303DL-T1-GE3 MOSFET P-CH 20V 670MA SOT323-3

SI1305DL-T1-GE3 MOSFET P-CH G-S 8V SC-70-3

相关代理商/技术参数

SI-10726 制造商: 功能描述: 制造商:undefined 功能描述:

SI1072X 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET

SI1072X_10 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET

SI1072X-T1-E3 功能描述:MOSFET 30V 1.3A 236mW 93mohm @ 10V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SI1072X-T1-GE3 功能描述:MOSFET 30V 1.3A 0.236W 93mohm @ 10V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SI1073X 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET

SI1073X-T1-E3 功能描述:MOSFET 30V 0.98A 0.236W 173 mohms @ 10V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SI1073X-T1-GE3 功能描述:MOSFET 30V 0.98A 0.236W 173 mohms @ 10V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube